2SC3418
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3418
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 1.7
pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SC3418
2SC3418
Datasheet (PDF)
8.2. Size:150K sanyo
2sa1353 2sc3417.pdf
Ordering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Color TV chroma output, high-voltage driver appli-2009Bcations.[2SA1353/2SC3417]Features High breakdown voltage : VCEO 300V. Excellent high fr
8.3. Size:149K sanyo
2sa1352 2sc3416.pdf
Ordering number:EN1411CPNP/NPN Epitaxial Planar Silicon Transistors2SA1352/2SC3416Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Color TV chroma output, high-voltage driverunit:mmapplicatons.2009B[2SA1352/2SC3416]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfreq
8.4. Size:163K rohm
2sc4061k 2sc3415s 2sc4015.pdf
Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.62.8(1) EmitterAbsolute maximum ratings (Ta=25C) (2) Base(3) CollectorParameter Symbol Limits Unit0.3Min.ROHM
8.5. Size:68K rohm
2sc3415s.pdf
2SC4061K / 2SC3415S / 2SC4015TransistorsChroma amplifier transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(2) Base(3) Collector0.3Min. Absolute maximum ratings (Ta=25
8.6. Size:24K hitachi
2sc3413.pdf
2SC3413Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3413Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip
8.7. Size:78K secos
2sc3415.pdf
2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage G H Low Collector Output Capacitance Ideal for Chroma Circuit EmitterCollectorJBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC
8.8. Size:261K foshan
2sc3417 3da3417.pdf
2SC3417(3DA3417) NPN /SILICON NPN TRANSISTOR :,/Purpose: High-definition CRT display, color TV chroma output and high breakdown voltage driver. :,/Features: High breakdown voltage, excellent high frequency Characteristic. /Absolute maxi
8.9. Size:200K inchange semiconductor
2sc3419.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3419DESCRIPTIONLow Collector Saturation VoltageHigh power dissipationComplementary to 2SA1356100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
8.10. Size:208K inchange semiconductor
2sc3412.pdf
isc Silicon NPN Power Transistor 2SC3412DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vol
8.11. Size:198K inchange semiconductor
2sc3416.pdf
isc Silicon NPN Power Transistor 2SC3416DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 200V (Min)(BR)CEOComplement to Type 2SA1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
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