Справочник транзисторов. 2SC3418

 

Биполярный транзистор 2SC3418 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3418
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 1.7 pf
   Статический коэффициент передачи тока (hfe): 55
   Корпус транзистора: TO126

 Аналоги (замена) для 2SC3418

 

 

2SC3418 Datasheet (PDF)

 8.1. Size:176K  toshiba
2sc3419.pdf

2SC3418
2SC3418

 8.2. Size:150K  sanyo
2sa1353 2sc3417.pdf

2SC3418
2SC3418

Ordering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Color TV chroma output, high-voltage driver appli-2009Bcations.[2SA1353/2SC3417]Features High breakdown voltage : VCEO 300V. Excellent high fr

 8.3. Size:149K  sanyo
2sa1352 2sc3416.pdf

2SC3418
2SC3418

Ordering number:EN1411CPNP/NPN Epitaxial Planar Silicon Transistors2SA1352/2SC3416Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Color TV chroma output, high-voltage driverunit:mmapplicatons.2009B[2SA1352/2SC3416]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfreq

 8.4. Size:163K  rohm
2sc4061k 2sc3415s 2sc4015.pdf

2SC3418
2SC3418

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.62.8(1) EmitterAbsolute maximum ratings (Ta=25C) (2) Base(3) CollectorParameter Symbol Limits Unit0.3Min.ROHM

 8.5. Size:68K  rohm
2sc3415s.pdf

2SC3418
2SC3418

2SC4061K / 2SC3415S / 2SC4015TransistorsChroma amplifier transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(2) Base(3) Collector0.3Min. Absolute maximum ratings (Ta=25

 8.6. Size:24K  hitachi
2sc3413.pdf

2SC3418
2SC3418

2SC3413Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3413Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip

 8.7. Size:78K  secos
2sc3415.pdf

2SC3418

2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage G H Low Collector Output Capacitance Ideal for Chroma Circuit EmitterCollectorJBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC

 8.8. Size:261K  foshan
2sc3417 3da3417.pdf

2SC3418
2SC3418

2SC3417(3DA3417) NPN /SILICON NPN TRANSISTOR :,/Purpose: High-definition CRT display, color TV chroma output and high breakdown voltage driver. :,/Features: High breakdown voltage, excellent high frequency Characteristic. /Absolute maxi

 8.9. Size:200K  inchange semiconductor
2sc3419.pdf

2SC3418
2SC3418

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3419DESCRIPTIONLow Collector Saturation VoltageHigh power dissipationComplementary to 2SA1356100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 8.10. Size:208K  inchange semiconductor
2sc3412.pdf

2SC3418
2SC3418

isc Silicon NPN Power Transistor 2SC3412DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vol

 8.11. Size:198K  inchange semiconductor
2sc3416.pdf

2SC3418
2SC3418

isc Silicon NPN Power Transistor 2SC3416DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 200V (Min)(BR)CEOComplement to Type 2SA1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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