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2SC3423O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3423O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 1.8 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: ISO126
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2SC3423O Datasheet (PDF)

 7.1. Size:133K  toshiba
 2sc3423.pdf pdf_icon

2SC3423O

2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitt

 7.2. Size:197K  jmnic
 2sc3423.pdf pdf_icon

2SC3423O

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 7.3. Size:133K  inchange semiconductor
 2sc3423-126.pdf pdf_icon

2SC3423O

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

 7.4. Size:196K  inchange semiconductor
 2sc3423.pdf pdf_icon

2SC3423O

isc Silicon NPN Power Transistor 2SC3423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOComplement to Type 2SA1360Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: PMD11K60 | 3CG608 | TSC148DCM | MP4142 | TK20B | BF377 | SE4010

 

 
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