2N2001 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2001
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 20 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6 MHz
Capacitancia de salida (Cc): 35 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N2001
2N2001 Datasheet (PDF)
xm2n200.pdf
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sfp135n200c3 sfb132n200c3.pdf
SFP135N200C3,SFB132N200C3ENGN-MOSFET 200V, 11.3m, 95AFeatures Product Summary N-channel, normal levelVDS 200V Enhanced avalanche ruggednessRDS(on) 11.3m Maximum 175C junction temperatureID 95A100% DVDS TestedApplications100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systemsSFP135N2
sfw132n200i3.pdf
SFW132N200I3 N-MOSFET 200V, 10.4m, 95A Features Product Summary N-channel, normal levelV 200V DS Enhanced avalanche ruggednessR 10.4m DS(on) Maximum 175C junction temperatureI 95A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC ConverterSFW132N200I3Package
Otros transistores... 2N1994 , 2N1995 , 2N1996 , 2N1997 , 2N1998 , 2N1999 , 2N200 , 2N2000 , S9013 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , 2N2006 , 2N2007 , 2N2008 , 2N201 .
