2N2001 Datasheet and Replacement

GOFORD XM2N200. D Description The XM2N200.uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an... See More ⇒

SFP135N200C3,SFB132N200C3 ENG N-MOSFET 200V, 11.3m , 95A Features Product Summary N-channel, normal level VDS 200V Enhanced avalanche ruggedness RDS(on) 11.3m Maximum 175 C junction temperature ID 95A 100% DVDS Tested Applications 100% Avalanche Tested DC/DC and AC/DC converters Brushed and BLDC Motor drive systems Battery powered systems SFP135N2... See More ⇒

SFW132N200I3 N-MOSFET 200V, 10.4m , 95A Features Product Summary N-channel, normal level V 200V DS Enhanced avalanche ruggedness R 10.4m DS(on) Maximum 175 C junction temperature I 95A D 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter SFW132N200I3 Package ... See More ⇒