2SC3479 Todos los transistores

 ..1. Size:200K  inchange semiconductor
 2sc3479.pdf

isc Silicon NPN Power Transistor 2SC3479 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:302K  toshiba
 2sc3474.pdf

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit mm Solenoid Drive Applications High DC current gain hFE = 500 (min) (I = 400 mA) C Low saturation voltage V = 0.5 V (max) (I = 300 mA) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Coll

 8.2. Size:163K  nec
 2sc3478 2sc3478 2sc3478a.pdf

 8.3. Size:24K  hitachi
 2sc3470.pdf

2SC3470 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temper

 8.4. Size:201K  inchange semiconductor
 2sc3475.pdf

isc Silicon NPN Power Transistor 2SC3475 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 2A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U