2SC3479 Datasheet and Replacement

isc Silicon NPN Power Transistor 2SC3479DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit: mm Solenoid Drive Applications High DC current gain: hFE = 500 (min) (I = 400 mA) C Low saturation voltage: V = 0.5 V (max) (I = 300 mA) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VColl

2SC3470Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3470Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temper

isc Silicon NPN Power Transistor 2SC3475DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 2ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U