2SC349
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC349
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-base (Vcb): 90
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2SC349
2SC349
Datasheet (PDF)
0.2. Size:91K sanyo
2sc3495.pdf
Ordering number:EN1430BNPN Epitaxial Planar Silicon Transistor2SC3495High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF amplifier, various driver, muting circuit. unit:mm2003AFeatures [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-
0.3. Size:98K panasonic
2sc3496.pdf
Power Transistors2SC3496, 2SC3496ASilicon NPN triple diffusion planar typeFor power switchingUnit: mm8.50.2 3.40.36.00.2 1.00.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO0 to 0.4 Satisfactory linearity of forward current transfer ratio hFER = 0.50.80.1 N type package enabling direct soldering of the radiatin
0.4. Size:24K hitachi
2sc3494.pdf
2SC3494Silicon NPN Epitaxial PlanarApplicationFM RF/IF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temp
0.5. Size:104K tysemi
2sc3496a.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specification2SC3496ATO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh-speed switchingHigh collector-base voltage (Emitter open) VCBO0.127+0.1 max0.80-0.1Satisfactory linearity of forward current transfer ratio hFE+0.12.3 0.60-0.11 Base+0
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.