2SC349 Todos los transistores

 0.1. Size:78K  1
 2sc3498 2sc3499.pdf

 0.2. Size:91K  sanyo
 2sc3495.pdf

Ordering number EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF amplifier, various driver, muting circuit. unit mm 2003A Features [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-

 0.3. Size:98K  panasonic
 2sc3496.pdf

Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0 to 0.4 Satisfactory linearity of forward current transfer ratio hFE R = 0.5 0.8 0.1 N type package enabling direct soldering of the radiatin

 0.4. Size:24K  hitachi
 2sc3494.pdf

2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temp

 0.5. Size:104K  tysemi
 2sc3496a.pdf

SMD Type SMD Type SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification 2SC3496A TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0.127 +0.1 max 0.80-0.1 Satisfactory linearity of forward current transfer ratio hFE +0.1 2.3 0.60-0.1 1 Base +0