2SC349 Datasheet and Replacement

Ordering number:EN1430BNPN Epitaxial Planar Silicon Transistor2SC3495High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF amplifier, various driver, muting circuit. unit:mm2003AFeatures [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-

Power Transistors2SC3496, 2SC3496ASilicon NPN triple diffusion planar typeFor power switchingUnit: mm8.50.2 3.40.36.00.2 1.00.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO0 to 0.4 Satisfactory linearity of forward current transfer ratio hFER = 0.50.80.1 N type package enabling direct soldering of the radiatin

2SC3494Silicon NPN Epitaxial PlanarApplicationFM RF/IF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temp

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specification2SC3496ATO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh-speed switchingHigh collector-base voltage (Emitter open) VCBO0.127+0.1 max0.80-0.1Satisfactory linearity of forward current transfer ratio hFE+0.12.3 0.60-0.11 Base+0