2SC3513 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3513Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC3513Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 150 mWJunction t

SMD Type TransistorsNPN Transistors2SC3513SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=11V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.)

2SC3512Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC3512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 600 mWJunct

2SC3127, 2SC3128, 2SC3510Silicon NPN EpitaxialApplicationUHF/VHF wide band amplifierOutlineMPAK 2SC3127311. Emitter2. Base23. Collector2SC3127, 2SC3128, 2SC3510TO-92 (2) 2SC3128, 2SC35101. Base2. Emitter3. Collector321Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC3127*1 2SC3128 2SC3510 UnitCollector to base voltage VCBO 20 20 20 VCollector t

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LAPT 2SC3519/3519ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions MT-100(TO3P)RatingsRatingsSymbol UnitSymbol Conditions Unit2SC3519 2SC3519A2SC3519 2SC3519A0.24.80.415.6VCBO 0.1160 180 V 100max A 9.6

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

SMD Type TransistorsNPN Transistors2SC3515SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors 2SC3518-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High DC current gain Low saturation voltage0.127 Complementary to 2SA1385-Z+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo

isc Silicon NPN Power Transistors 2SC3519/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3519(BR)CEO= 180V(Min)-2SC3519AGood Linearity of hFEComplement to Type 2SA1386/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3512DESCRIPTIONLow Noise and High GainNF = 1.6 dB TYP. @f = 900 MHzPG = 10.5 dB TYP. @f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-noise and small signal amplifiersfrom VHF ~ UHF band.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor 2SC3518-ZDESCRIPTIONLow collector saturation voltageHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3514DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

isc Silicon NPN Power Transistor 2SC3518DESCRIPTIONLow collector saturation voltageHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT