2SC3517 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.)

2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3513 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction t

2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 600 mW Junct

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 1. Emitter 2. Base 2 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC3127*1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector t

A A A

LAPT 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SC3519 2SC3519A 2SC3519 2SC3519A 0.2 4.8 0.4 15.6 VCBO 0.1 160 180 V 100max A 9.6

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

SMD Type Transistors NPN Transistors 2SC3515 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type Transistors NPN Transistors 2SC3513 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type Transistors NPN Transistors 2SC3518-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High DC current gain Low saturation voltage 0.127 Complementary to 2SA1385-Z +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo

isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3519 (BR)CEO = 180V(Min)-2SC3519A Good Linearity of h FE Complement to Type 2SA1386/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF UHF band. ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor 2SC3518-Z DESCRIPTION Low collector saturation voltage High DC current gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

isc Silicon NPN Power Transistor 2SC3518 DESCRIPTION Low collector saturation voltage High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT