2SC3534 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.)

2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

Ordering number:EN1438BNPN Epitaxial Planar Silicon Transistor2SC3504High-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2006A[2SC3504]B : BaseEIAJ : SC-51C : CollectorE : EmitterSANYO : MPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

Ordering number:EN1764BPNP/NPN Epitaxial Planar Silicon Transistors2SA1405/2SC3599Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1405/2SC3599] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO

Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo

Ordering number:EN1756BNPN Epitaxial Planar Silicon Transistor2SC3595Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output driver.2009B Wideband amplifiers.[2SC3595]Features High fT : fT typ=2.0GHz. High current : IC=500mA.1 : Emitter2 : Collector3 : BaseJE

Ordering number:EN1425CPNP/NPN Epitaxial Planar Silicon Transistors2SA1380/2SC3502Ultrahigh-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent2009Bhigh-frequnecy characteristics[2SA1380/2SC3502]: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio

Ordering number:EN1761BPNP/NPN Epitaxial Planar Silicon Transistors2SA1402/2SC3596Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1402/2SC3596] Wide-band amp.Features High fT: fT typ=700MHz. Small reverse transfer capacit

Ordering number:EN1426BPNP/NPN Epitaxial Planar Silicon Transistors2SA1381/2SC3503High-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 300V.unit:mm Small reverse transfer capacitance and excellent high2009Afrequency characteristic[2SA1381/2SC3503]: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of

Ordering number:EN1763BPNP/NPN Epitaxial Planar Silicon Transistors2SA1404/2SC3598Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplictions Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1404/2SC3598] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO

Ordering number:EN1597CNPN Triple Diffused Planar Silicon Transistor2SC3552800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3552] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol

Ordering number:EN1762BPNP/NPN Epitaxial Planar Silicon Transistors2SA1403/2SC3597Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahig-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1403/2SC3597] Wide-band amp.Features High fT : fT typ=800MHz. Small reverse transfer capacit

March 20082SC3503/KSC3503NPN Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequency:

DATA SHEETSILICON TRANSISTOR2SC3587NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 0.5 to 6.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3585 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. The2SC3585 features excellent power gain with very low-noise figures. The2.80.22SC3585 em

DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3545UHF OSCILLATOR AND MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3545 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any change of th

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3582MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC3582 is an NPN epitaxial silicon transistor designed for use inPACKAFE DIMENSIONSin millimeters (inches)low-noise and small signal amplifiers from VHF band to UHF band. Low-5.2 MAX.noise figure, high gain, and high current capability achieve a very

NPN SILICON NE944OSCILLATOR AND MIXER TRANSISTOR SERIESDESCRIPTIONFEATURESThe NE944 series of NPN silicon epitaxial bipolar transistors LOW COSTis intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT:mixer applications. It is suitable for automotive keyless entryfT = 2000 MHz TYPand TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN

DATA SHEETSILICON POWER TRANSISTOR2SC3569NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide2.80.2dynamic

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Transistor2SC3526(H)Silicon NPN epitaxial planer typeFor display video outputUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.Wide current range. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 110 V+0.2 +0.2Collector to emitter voltage VCER* 100

Power Transistors2SC3507Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw2.0 0.2

Power Transistors2SC3506Silicon NPN triple diffusion planar typeFor high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw2.0 0.2Absolute Maximum Rating

Transistor2SC3526(H)Silicon NPN epitaxial planer typeFor display video outputUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.Wide current range. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 110 V+0.2 +0.2Collector to emitter voltage VCER* 100

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC3513Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC3513Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 150 mWJunction t

2SC3512Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC3512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 600 mWJunct

2SC3127, 2SC3128, 2SC3510Silicon NPN EpitaxialApplicationUHF/VHF wide band amplifierOutlineMPAK 2SC3127311. Emitter2. Base23. Collector2SC3127, 2SC3128, 2SC3510TO-92 (2) 2SC3128, 2SC35101. Base2. Emitter3. Collector321Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC3127*1 2SC3128 2SC3510 UnitCollector to base voltage VCBO 20 20 20 VCollector t

2SC3553Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3553Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollector power dissipation PC 300 mWJunction temper

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Ab

Silicon Epitaxial Planar Transistor2SC3552GENERAL DESCRIPTIONSilicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1100 VCESMCollector-emitter voltage (open base)V - 500 VCEOCollector

JMnic Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYM

JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYM

JMnic Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION With TO-3PN package High voltage ,high reliability High speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified

LAPT 2SC3519/3519ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions MT-100(TO3P)RatingsRatingsSymbol UnitSymbol Conditions Unit2SC3519 2SC3519A2SC3519 2SC3519A0.24.80.415.6VCBO 0.1160 180 V 100max A 9.6

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

SMD Type TransistorsNPN Transistors2SC3515SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors2SC3585SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=35mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Transistors2SC3554SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors2SC3513SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=11V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type TransistorsNPN Transistors2SC3545SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors 2SC3518-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High DC current gain Low saturation voltage0.127 Complementary to 2SA1385-Z+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo

SMD Type TransistorsNPN Transistors2SC3547ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Silicon Triple Diffused Transistor2SC3588-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh voltage VCEO=400V0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 500 VCollector t

SMD Type TransistorsNPN Transistors2SC3583SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=65mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR : CRT Purpose: Ultrahigh-definition CRT display, video output applications. :,, Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim

2SC3585NPN2SC3585 NPN SOT-23-3L VHFUHF CATV :S21e2 5.5dB @ VCE=6VIC=

isc Silicon NPN Power Transistors 2SC3519/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3519(BR)CEO= 180V(Min)-2SC3519AGood Linearity of hFEComplement to Type 2SA1386/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3577DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 850V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

isc Silicon NPN Power Transistor 2SC3566DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM

isc Silicon NPN RF Transistor 2SC3585DESCRIPTIONCollector Current I = 35mACCollector-Emitter Breakdown Voltage-: V = 10V(Min)(BR)CEOHigh gain:2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz)CGain bandwidth productfT = 10 GHZ (typical) (I =10mA,f=1GH)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

isc Silicon NPN Power Transistors 2SC3591DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC3570DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M

isc Silicon NPN Power Transistor 2SC3571DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M

isc Silicon NPN Power Transistor 2SC3527DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon NPN Power Transistor 2SC3507DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC3506DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-B

isc Silicon NPN Power Transistors 2SC3590DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3512DESCRIPTIONLow Noise and High GainNF = 1.6 dB TYP. @f = 900 MHzPG = 10.5 dB TYP. @f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-noise and small signal amplifiersfrom VHF ~ UHF band.ABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3545DESCRIPTIONLow Base Time Constant;r = 4 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = -5mA, V = 10VE CELow Feedback Capacitance;C = 0.48 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for

isc Silicon NPN Power Transistor 2SC3518-ZDESCRIPTIONLow collector saturation voltageHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC3550DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3502DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 200 V(BR)CEOComplement to Type 2SA1380Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display, video out-put applicaitonsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3588DESCRIPTIONLow Collector Saturation Voltage-V = 0.5V(Max)@ I = 300mACE(sat) CHigh Collector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOComplement to Type 2SA1400Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high Voltage switching applicationsABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SC3540DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CComplement to Type 2SA1388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3582DESCRIPTIONLow Noise Figure, High Gain, and High Current CapabilityAchieve a Very Wide Dynamic Range and Excellent Linearity.Low Noise and High GainNF = 1.2 dB TYP. @f = 1.0 GHzGa = 12 dB TYP. @f = 1.0 GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

isc Silicon NPN Power Transistors 2SC3549DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolids state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SC3561DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3569DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3505DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 700V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3552DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Co

isc Silicon NPN Power Transistor 2SC3568DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1396Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3544DESCRIPTIONLow Base Time Constant;r = 5 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = 5mA, V = 10VE CELow Feedback Capacitance;C = 0.55 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for u

isc Silicon NPN Power Transistor 2SC3557DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SC3563DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC3588-ZDESCRIPTIONLow Collector Saturation Voltage-V = 0.5V(Max)@ I = 300mACE(sat) CHigh Collector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOComplement to Type 2SA1400-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high Voltage switching applicationsABSOLUTE MAX

isc Silicon NPN Power Transistor 2SC3514DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION With TO-3PFa package High collector current Low saturation voltage APPLICATIONS For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V

isc Silicon NPN Power Transistor 2SC3518DESCRIPTIONLow collector saturation voltageHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3551DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3528DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon NPN Power Transistor 2SC3559DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3547DESCRIPTIONHigh Current-GainBandwidth Productf = 4 GHz TYP. @ V = 10 V,I = 5 mAT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner, UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN RF Transistor 2SC3583DESCRIPTIONLow Noise and High GainNF = 1.2 dB TYP., G = 11 dB TYP.a@V = 8 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 15dB TYP.@V = 8V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHF and CATVband.AB