2SC3534 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3534
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: MP80
2SC3534 Transistor Equivalent Substitute - Cross-Reference Search
2SC3534 Datasheet (PDF)
2sc3509.pdf
/ecdcle stage.neaunniettnnioacmaintenance typesplaned maintenance typeMidiscontinued typeplaned discontinued typedDMaintenance/Discontinued includes following four Product lifecyhttp://www.semicon.panasonic.co.jp/en/Please visit following URL about latest information./ecdcle stage.neaunniettnnio
2sc3515.pdf
2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.)
2sc3547a.pdf
2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
2sc3547b.pdf
2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
2sc3504.pdf
Ordering number:EN1438BNPN Epitaxial Planar Silicon Transistor2SC3504High-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2006A[2SC3504]B : BaseEIAJ : SC-51C : CollectorE : EmitterSANYO : MPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating
2sa1405 2sc3599.pdf
Ordering number:EN1764BPNP/NPN Epitaxial Planar Silicon Transistors2SA1405/2SC3599Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1405/2SC3599] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO
2sc3576.pdf
Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo
2sc3595.pdf
Ordering number:EN1756BNPN Epitaxial Planar Silicon Transistor2SC3595Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output driver.2009B Wideband amplifiers.[2SC3595]Features High fT : fT typ=2.0GHz. High current : IC=500mA.1 : Emitter2 : Collector3 : BaseJE
2sc3502.pdf
Ordering number:EN1425CPNP/NPN Epitaxial Planar Silicon Transistors2SA1380/2SC3502Ultrahigh-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent2009Bhigh-frequnecy characteristics[2SA1380/2SC3502]: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio
2sa1402 2sc3596.pdf
Ordering number:EN1761BPNP/NPN Epitaxial Planar Silicon Transistors2SA1402/2SC3596Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1402/2SC3596] Wide-band amp.Features High fT: fT typ=700MHz. Small reverse transfer capacit
2sa1381 2sc3503.pdf
Ordering number:EN1426BPNP/NPN Epitaxial Planar Silicon Transistors2SA1381/2SC3503High-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 300V.unit:mm Small reverse transfer capacitance and excellent high2009Afrequency characteristic[2SA1381/2SC3503]: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of
2sa1404 2sc3598.pdf
Ordering number:EN1763BPNP/NPN Epitaxial Planar Silicon Transistors2SA1404/2SC3598Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplictions Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1404/2SC3598] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO
2sc3552.pdf
Ordering number:EN1597CNPN Triple Diffused Planar Silicon Transistor2SC3552800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3552] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol
2sa1403 2sc3597.pdf
Ordering number:EN1762BPNP/NPN Epitaxial Planar Silicon Transistors2SA1403/2SC3597Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahig-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1403/2SC3597] Wide-band amp.Features High fT : fT typ=800MHz. Small reverse transfer capacit
ksc3503 2sc3503.pdf
March 20082SC3503/KSC3503NPN Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequency:
2sc3587.pdf
DATA SHEETSILICON TRANSISTOR2SC3587NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 0.5 to 6.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M
2sc3585.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3585 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. The2SC3585 features excellent power gain with very low-noise figures. The2.80.22SC3585 em
2sc3570.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf
NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l
2sc3545.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3545UHF OSCILLATOR AND MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3545 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any change of th
2sc3582.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3582MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC3582 is an NPN epitaxial silicon transistor designed for use inPACKAFE DIMENSIONSin millimeters (inches)low-noise and small signal amplifiers from VHF band to UHF band. Low-5.2 MAX.noise figure, high gain, and high current capability achieve a very
2sc3545 2sc4184 ne94430 ne94433.pdf
NPN SILICON NE944OSCILLATOR AND MIXER TRANSISTOR SERIESDESCRIPTIONFEATURESThe NE944 series of NPN silicon epitaxial bipolar transistors LOW COSTis intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT:mixer applications. It is suitable for automotive keyless entryfT = 2000 MHz TYPand TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN
2sc3569.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3569NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a
2sc3583.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide2.80.2dynamic
2sc3503 ksc3503.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
2sc3526.pdf
Transistor2SC3526(H)Silicon NPN epitaxial planer typeFor display video outputUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.Wide current range. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 110 V+0.2 +0.2Collector to emitter voltage VCER* 100
2sc3507.pdf
Power Transistors2SC3507Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw2.0 0.2
2sc3506.pdf
Power Transistors2SC3506Silicon NPN triple diffusion planar typeFor high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw2.0 0.2Absolute Maximum Rating
2sc3526 e.pdf
Transistor2SC3526(H)Silicon NPN epitaxial planer typeFor display video outputUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.Wide current range. 0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 110 V+0.2 +0.2Collector to emitter voltage VCER* 100
2sc3549.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc3505.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc3513.pdf
2SC3513Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC3513Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 150 mWJunction t
2sc3512.pdf
2SC3512Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC3512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 600 mWJunct
2sc3127 2sc3128 2sc3510.pdf
2SC3127, 2SC3128, 2SC3510Silicon NPN EpitaxialApplicationUHF/VHF wide band amplifierOutlineMPAK 2SC3127311. Emitter2. Base23. Collector2SC3127, 2SC3128, 2SC3510TO-92 (2) 2SC3128, 2SC35101. Base2. Emitter3. Collector321Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC3127*1 2SC3128 2SC3510 UnitCollector to base voltage VCBO 20 20 20 VCollector t
2sc3553.pdf
2SC3553Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3553Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollector power dissipation PC 300 mWJunction temper
2sc3571.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Ab
2sc3552.pdf
Silicon Epitaxial Planar Transistor2SC3552GENERAL DESCRIPTIONSilicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1100 VCESMCollector-emitter voltage (open base)V - 500 VCEOCollector
2sc3507.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYM
2sc3506.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYM
2sc3505.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION With TO-3PN package High voltage ,high reliability High speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified
2sc3519.pdf
LAPT 2SC3519/3519ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions MT-100(TO3P)RatingsRatingsSymbol UnitSymbol Conditions Unit2SC3519 2SC3519A2SC3519 2SC3519A0.24.80.415.6VCBO 0.1160 180 V 100max A 9.6
2sc3519b-a.pdf
RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen
2sc3519b.pdf
RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen
2sc3515.pdf
SMD Type TransistorsNPN Transistors2SC3515SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag
2sc3585.pdf
SMD Type TransistorsNPN Transistors2SC3585SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=35mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc3554.pdf
SMD Type TransistorsNPN Transistors2SC3554SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag
2sc3513.pdf
SMD Type TransistorsNPN Transistors2SC3513SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=11V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
2sc3545.pdf
SMD Type TransistorsNPN Transistors2SC3545SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc3518-z.pdf
SMD Type TransistorsNPN Transistors 2SC3518-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High DC current gain Low saturation voltage0.127 Complementary to 2SA1385-Z+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo
2sc3547a.pdf
SMD Type TransistorsNPN Transistors2SC3547ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc3588-z.pdf
SMD Type TransistorsNPN Silicon Triple Diffused Transistor2SC3588-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh voltage VCEO=400V0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 500 VCollector t
2sc3583.pdf
SMD Type TransistorsNPN Transistors2SC3583SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=65mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc3502 3da3502.pdf
2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR : CRT Purpose: Ultrahigh-definition CRT display, video output applications. :,, Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim
2sc3585a 2sc3585b 2sc3585c 2sc3585d.pdf
2SC3585NPN2SC3585 NPN SOT-23-3L VHFUHF CATV :S21e2 5.5dB @ VCE=6VIC=
2sc3519 2sc3519a.pdf
isc Silicon NPN Power Transistors 2SC3519/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3519(BR)CEO= 180V(Min)-2SC3519AGood Linearity of hFEComplement to Type 2SA1386/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc3577.pdf
isc Silicon NPN Power Transistor 2SC3577DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 850V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sc3566.pdf
isc Silicon NPN Power Transistor 2SC3566DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM
2sc3585.pdf
isc Silicon NPN RF Transistor 2SC3585DESCRIPTIONCollector Current I = 35mACCollector-Emitter Breakdown Voltage-: V = 10V(Min)(BR)CEOHigh gain:2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz)CGain bandwidth productfT = 10 GHZ (typical) (I =10mA,f=1GH)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign
2sc3591.pdf
isc Silicon NPN Power Transistors 2SC3591DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sc3570.pdf
isc Silicon NPN Power Transistor 2SC3570DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
2sc3571.pdf
isc Silicon NPN Power Transistor 2SC3571DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
2sc3527.pdf
isc Silicon NPN Power Transistor 2SC3527DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sc3507.pdf
isc Silicon NPN Power Transistor 2SC3507DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3506.pdf
isc Silicon NPN Power Transistor 2SC3506DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-B
2sc3590.pdf
isc Silicon NPN Power Transistors 2SC3590DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sc3512.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3512DESCRIPTIONLow Noise and High GainNF = 1.6 dB TYP. @f = 900 MHzPG = 10.5 dB TYP. @f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-noise and small signal amplifiersfrom VHF ~ UHF band.ABSOLUTE MAXIMUM RATIN
2sc3545.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3545DESCRIPTIONLow Base Time Constant;r = 4 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = -5mA, V = 10VE CELow Feedback Capacitance;C = 0.48 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for
2sc3518-z.pdf
isc Silicon NPN Power Transistor 2SC3518-ZDESCRIPTIONLow collector saturation voltageHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc3550.pdf
isc Silicon NPN Power Transistor 2SC3550DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc3565.pdf
isc Silicon NPN Power Transistor 2SC3565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI
2sc3502.pdf
isc Silicon NPN Power Transistor 2SC3502DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 200 V(BR)CEOComplement to Type 2SA1380Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display, video out-put applicaitonsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sc3588.pdf
isc Silicon NPN Power Transistor 2SC3588DESCRIPTIONLow Collector Saturation Voltage-V = 0.5V(Max)@ I = 300mACE(sat) CHigh Collector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOComplement to Type 2SA1400Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high Voltage switching applicationsABSOLUTE MAXIMUM
2sc3540.pdf
isc Silicon NPN Power Transistor 2SC3540DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CComplement to Type 2SA1388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
2sc3582.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3582DESCRIPTIONLow Noise Figure, High Gain, and High Current CapabilityAchieve a Very Wide Dynamic Range and Excellent Linearity.Low Noise and High GainNF = 1.2 dB TYP. @f = 1.0 GHzGa = 12 dB TYP. @f = 1.0 GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
2sc3549.pdf
isc Silicon NPN Power Transistors 2SC3549DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolids state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3569.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3569DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3505.pdf
isc Silicon NPN Power Transistor 2SC3505DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 700V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc3519 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U
2sc3552.pdf
isc Silicon NPN Power Transistor 2SC3552DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Co
2sc3568.pdf
isc Silicon NPN Power Transistor 2SC3568DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1396Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sc3544.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3544DESCRIPTIONLow Base Time Constant;r = 5 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = 5mA, V = 10VE CELow Feedback Capacitance;C = 0.55 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for u
2sc3557.pdf
isc Silicon NPN Power Transistor 2SC3557DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3588-z.pdf
isc Silicon NPN Power Transistor 2SC3588-ZDESCRIPTIONLow Collector Saturation Voltage-V = 0.5V(Max)@ I = 300mACE(sat) CHigh Collector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOComplement to Type 2SA1400-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high Voltage switching applicationsABSOLUTE MAX
2sc3514.pdf
isc Silicon NPN Power Transistor 2SC3514DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sc3528-3pfa.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION With TO-3PFa package High collector current Low saturation voltage APPLICATIONS For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V
2sc3518.pdf
isc Silicon NPN Power Transistor 2SC3518DESCRIPTIONLow collector saturation voltageHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sc3551.pdf
isc Silicon NPN Power Transistor 2SC3551DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc3528.pdf
isc Silicon NPN Power Transistor 2SC3528DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sc3559.pdf
isc Silicon NPN Power Transistor 2SC3559DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3547.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3547DESCRIPTIONHigh Current-GainBandwidth Productf = 4 GHz TYP. @ V = 10 V,I = 5 mAT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner, UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc3583.pdf
isc Silicon NPN RF Transistor 2SC3583DESCRIPTIONLow Noise and High GainNF = 1.2 dB TYP., G = 11 dB TYP.a@V = 8 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 15dB TYP.@V = 8V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHF and CATVband.AB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .