2SC3536 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o

2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.)

2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

Ordering number EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2006A [2SC3504] B Base EIAJ SC-51 C Collector E Emitter SANYO MP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating

Ordering number EN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1405/2SC3599] Wide-band amp. Features High fT fT typ=500MHz. High breakdown voltage VCEO

Ordering number EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF general-purpose amplifiers, various drivers, unit mm muting circuit. 2033 [2SC3576] Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo

Ordering number EN1756B NPN Epitaxial Planar Silicon Transistor 2SC3595 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output driver. 2009B Wideband amplifiers. [2SC3595] Features High fT fT typ=2.0GHz. High current IC=500mA. 1 Emitter 2 Collector 3 Base JE

Ordering number EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio

Ordering number EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1402/2SC3596] Wide-band amp. Features High fT fT typ=700MHz. Small reverse transfer capacit

Ordering number EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 300V. unit mm Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of

Ordering number EN1597C NPN Triple Diffused Planar Silicon Transistor 2SC3552 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3552] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol

Ordering number EN1762B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1403/2SC3597 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahig-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1403/2SC3597] Wide-band amp. Features High fT fT typ=800MHz. Small reverse transfer capacit

March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage VCEO= 300V Low Reverse Transfer Capacitance Cre= 1.8pF at VCB = 30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequency

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3585 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2.8 0.2 2SC3585 em

DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS (Units mm) UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against 2.8 0.2 any change of th

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters (inches) low-noise and small signal amplifiers from VHF band to UHF band. Low- 5.2 MAX. noise figure, high gain, and high current capability achieve a very

NPN SILICON NE944 OSCILLATOR AND MIXER TRANSISTOR SERIES DESCRIPTION FEATURES The NE944 series of NPN silicon epitaxial bipolar transistors LOW COST is intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT mixer applications. It is suitable for automotive keyless entry fT = 2000 MHz TYP and TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN

DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. Low- noise figure, high gain, and high current capability achieve a very wide 2.8 0.2 dynamic

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100

Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0.2

Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 Absolute Maximum Rating

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3513 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction t

2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 600 mW Junct

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 1. Emitter 2. Base 2 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC3127*1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector t

2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction temper

A A A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Ab

Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1100 V CESM Collector-emitter voltage (open base) V - 500 V CEO Collector

JMnic Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

JMnic Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION With TO-3PN package High voltage ,high reliability High speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified

LAPT 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SC3519 2SC3519A 2SC3519 2SC3519A 0.2 4.8 0.4 15.6 VCBO 0.1 160 180 V 100max A 9.6

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

SMD Type Transistors NPN Transistors 2SC3515 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type Transistors NPN Transistors 2SC3585 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=35mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type Transistors NPN Transistors 2SC3554 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type Transistors NPN Transistors 2SC3513 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type Transistors NPN Transistors 2SC3545 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type Transistors NPN Transistors 2SC3518-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High DC current gain Low saturation voltage 0.127 Complementary to 2SA1385-Z +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo

SMD Type Transistors NPN Transistors 2SC3547A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High voltage VCEO=400V 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector t

SMD Type Transistors NPN Transistors 2SC3583 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=65mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR CRT Purpose Ultrahigh-definition CRT display, video output applications. , , Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim

2SC3585 NPN 2SC3585 NPN SOT-23-3L VHF UHF CATV S21e 2 5.5dB @ VCE=6V IC=

isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3519 (BR)CEO = 180V(Min)-2SC3519A Good Linearity of h FE Complement to Type 2SA1386/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3577 DESCRIPTION High Collector-Base Breakdown Voltage- V = 850V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM

isc Silicon NPN RF Transistor 2SC3585 DESCRIPTION Collector Current I = 35mA C Collector-Emitter Breakdown Voltage- V = 10V(Min) (BR)CEO High gain 2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz) C Gain bandwidth product fT = 10 GHZ (typical) (I =10mA,f=1GH) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

isc Silicon NPN Power Transistors 2SC3591 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M

isc Silicon NPN Power Transistor 2SC3571 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M

isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2SC3507 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3506 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-B

isc Silicon NPN Power Transistors 2SC3590 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF UHF band. ABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 DESCRIPTION Low Base Time Constant; r = 4 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = -5mA, V = 10V E CE Low Feedback Capacitance; C = 0.48 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

isc Silicon NPN Power Transistor 2SC3518-Z DESCRIPTION Low collector saturation voltage High DC current gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3502 DESCRIPTION Collector Emitter Breakdown Voltage V = 200 V (BR)CEO Complement to Type 2SA1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3588 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 300mA CE(sat) C High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Complement to Type 2SA1400 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Voltage switching applications ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SC3540 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Complement to Type 2SA1388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3582 DESCRIPTION Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION High Voltage High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solids state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

isc Silicon NPN Power Transistor 2SC3561 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3569 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3505 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 700V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION High Breakdown Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO V Co

isc Silicon NPN Power Transistor 2SC3568 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1396 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 DESCRIPTION Low Base Time Constant; r = 5 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = 5mA, V = 10V E CE Low Feedback Capacitance; C = 0.55 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for u

isc Silicon NPN Power Transistor 2SC3557 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC3588-Z DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 300mA CE(sat) C High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Complement to Type 2SA1400-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Voltage switching applications ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION With TO-3PFa package High collector current Low saturation voltage APPLICATIONS For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V

isc Silicon NPN Power Transistor 2SC3518 DESCRIPTION Low collector saturation voltage High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3551 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC3528 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2SC3559 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3547 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. @ V = 10 V,I = 5 mA T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc Silicon NPN RF Transistor 2SC3583 DESCRIPTION Low Noise and High Gain NF = 1.2 dB TYP., G = 11 dB TYP. a @V = 8 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 15dB TYP. @V = 8V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band. AB