2SC3560
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3560
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SC3560
2SC3560
Datasheet (PDF)
8.2. Size:128K nec
2sc3569.pdf 
DATA SHEETSILICON POWER TRANSISTOR2SC3569NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
8.4. Size:203K inchange semiconductor
2sc3566.pdf
isc Silicon NPN Power Transistor 2SC3566DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM
8.5. Size:191K inchange semiconductor
2sc3565.pdf
isc Silicon NPN Power Transistor 2SC3565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI
8.6. Size:195K inchange semiconductor
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.7. Size:190K inchange semiconductor
2sc3569.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3569DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.8. Size:203K inchange semiconductor
2sc3568.pdf
isc Silicon NPN Power Transistor 2SC3568DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1396Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
8.9. Size:195K inchange semiconductor
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
