2SC3560 Specs and Replacement
Type Designator: 2SC3560
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
2SC3560 Substitution
- BJT ⓘ Cross-Reference Search
2SC3560 datasheet
DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do... See More ⇒
isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM... See More ⇒
Detailed specifications: 2SC3553, 2SC3554, 2SC3555, 2SC3556, 2SC3557, 2SC3558, 2SC3559, 2SC356, TIP120, 2SC3561, 2SC3562, 2SC3563, 2SC3564, 2SC3565, 2SC3566, 2SC3567, 2SC3568
Keywords - 2SC3560 pdf specs
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