2SC3560 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3560
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
2SC3560 Transistor Equivalent Substitute - Cross-Reference Search
2SC3560 Datasheet (PDF)
2sc3569.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3569NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
2sc3566.pdf
isc Silicon NPN Power Transistor 2SC3566DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM
2sc3565.pdf
isc Silicon NPN Power Transistor 2SC3565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc3569.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3569DESCRIPTIONLow Collector Saturation VoltageHigh switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially suited for high voltage,high speed andhigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3568.pdf
isc Silicon NPN Power Transistor 2SC3568DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SA1396Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sc3563.pdf
isc Silicon NPN Power Transistor 2SC3563DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SC3553 , 2SC3554 , 2SC3555 , 2SC3556 , 2SC3557 , 2SC3558 , 2SC3559 , 2SC356 , 2SC1740 , 2SC3561 , 2SC3562 , 2SC3563 , 2SC3564 , 2SC3565 , 2SC3566 , 2SC3567 , 2SC3568 .
