2SC3561 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3561 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 450 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO220
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2SC3561 datasheet
2sc3561.pdf
isc Silicon NPN Power Transistor 2SC3561 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc3569.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do
Otros transistores... 2SC3554, 2SC3555, 2SC3556, 2SC3557, 2SC3558, 2SC3559, 2SC356, 2SC3560, B647, 2SC3562, 2SC3563, 2SC3564, 2SC3565, 2SC3566, 2SC3567, 2SC3568, 2SC3569
Parámetros del transistor bipolar y su interrelación.
History: 2SC4135S-TL-E | UN521F | KRC413V | MUN5316DW1 | KT6134B | KRC453 | BDX50-4
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