2SC3569 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3569

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO220

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2SC3569 datasheet

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 2sc3569.pdf pdf_icon

2SC3569

DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do

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 2sc3569.pdf pdf_icon

2SC3569

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3569 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

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 2sc3567.pdf pdf_icon

2SC3569

 8.2. Size:172K  nec
 2sc3568.pdf pdf_icon

2SC3569

MOSTRAR MÁS

Otros transistores... 2SC3561, 2SC3562, 2SC3563, 2SC3564, 2SC3565, 2SC3566, 2SC3567, 2SC3568, TIP41C, 2SC3570, 2SC3571, 2SC3572, 2SC3573, 2SC3574, 2SC3575, 2SC3576, 2SC3577