2SC3573 Todos los transistores

 

2SC3573 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3573
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220
 

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2SC3573 Datasheet (PDF)

 8.1. Size:108K  sanyo
2sc3576.pdf pdf_icon

2SC3573

Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo

 8.2. Size:136K  nec
2sc3570.pdf pdf_icon

2SC3573

DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do

 8.3. Size:180K  nec
2sc3571.pdf pdf_icon

2SC3573

 8.4. Size:187K  nec
2sc3572.pdf pdf_icon

2SC3573

Otros transistores... 2SC3565 , 2SC3566 , 2SC3567 , 2SC3568 , 2SC3569 , 2SC3570 , 2SC3571 , 2SC3572 , TIP41 , 2SC3574 , 2SC3575 , 2SC3576 , 2SC3577 , 2SC3578 , 2SC3579 , 2SC3580 , 2SC3581 .

 

 
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