2SC3576 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3576
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 2.7 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: SPA
Búsqueda de reemplazo de transistor bipolar 2SC3576
2SC3576 Datasheet (PDF)
2sc3576.pdf
Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo
2sc3570.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
2sc3571.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Ab
2sc3577.pdf
isc Silicon NPN Power Transistor 2SC3577DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 850V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sc3570.pdf
isc Silicon NPN Power Transistor 2SC3570DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
2sc3571.pdf
isc Silicon NPN Power Transistor 2SC3571DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KT922B | GT905A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050