2SC3578
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3578
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 40
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar 2SC3578
2SC3578
Datasheet (PDF)
8.1. Size:108K sanyo
2sc3576.pdf
Ordering number:EN1799DNPN Epitaxial Planar Silicon Transistor2SC3576High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF general-purpose amplifiers, various drivers,unit:mmmuting circuit.2033[2SC3576]Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo
8.2. Size:136K nec
2sc3570.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC3570NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)voltage high-speed switching, and is ideal for use in drivers such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that do
8.5. Size:116K savantic
2sc3571.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Ab
8.6. Size:195K inchange semiconductor
2sc3577.pdf
isc Silicon NPN Power Transistor 2SC3577DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 850V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
8.7. Size:205K inchange semiconductor
2sc3570.pdf
isc Silicon NPN Power Transistor 2SC3570DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
8.8. Size:206K inchange semiconductor
2sc3571.pdf
isc Silicon NPN Power Transistor 2SC3571DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE M
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