2SC3578 Specs and Replacement
Type Designator: 2SC3578
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SC3578 datasheet
8.1. Size:108K sanyo
2sc3576.pdf 
Ordering number EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF general-purpose amplifiers, various drivers, unit mm muting circuit. 2033 [2SC3576] Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation vo... See More ⇒
8.2. Size:136K nec
2sc3570.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that do... See More ⇒
8.5. Size:116K savantic
2sc3571.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Ab... See More ⇒
8.6. Size:195K inchange semiconductor
2sc3577.pdf
isc Silicon NPN Power Transistor 2SC3577 DESCRIPTION High Collector-Base Breakdown Voltage- V = 850V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
8.7. Size:205K inchange semiconductor
2sc3570.pdf
isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M... See More ⇒
8.8. Size:206K inchange semiconductor
2sc3571.pdf
isc Silicon NPN Power Transistor 2SC3571 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M... See More ⇒
Detailed specifications: 2SC3570, 2SC3571, 2SC3572, 2SC3573, 2SC3574, 2SC3575, 2SC3576, 2SC3577, BC548, 2SC3579, 2SC3580, 2SC3581, 2SC3582, 2SC3583, 2SC3584, 2SC3585, 2SC3586
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