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2SC3611 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3611
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 110 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Ganancia de corriente contínua (hfe): 110
   Paquete / Cubierta: TO126

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2SC3611 Datasheet (PDF)

 ..1. Size:70K  panasonic
2sc3611.pdf

2SC3611
2SC3611

Power Transistors2SC3611Silicon NPN epitaxial planar typeUnit: mmFor video amplifier8.0+0.50.13.20.2 3.160.1 Features High transition frequency fT Small collector output capacitance Cob Wide current range TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25C0.750.10.50.

 8.1. Size:213K  toshiba
2sc3619.pdf

2SC3611
2SC3611

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2sc3613.pdf

2SC3611
2SC3611

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2sc3616.pdf

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2SC3611

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2sc3615.pdf

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2SC3611

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2sc3618.pdf

2SC3611
2SC3611

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2sc3617.pdf

2SC3611
2SC3611

 8.7. Size:1258K  kexin
2sc3618.pdf

2SC3611
2SC3611

SMD Type TransistorsNPN Transistors2SC3618SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

 8.8. Size:1269K  kexin
2sc3617.pdf

2SC3611
2SC3611

SMD Type TransistorsNPN Transistors2SC3617SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

 8.9. Size:191K  inchange semiconductor
2sc3619.pdf

2SC3611
2SC3611

isc Silicon NPN Power Transistor 2SC3619DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.ABSOL

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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