2SC3672O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3672O 📄📄

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TOSH2

📄📄 Copiar

Búsqueda de reemplazo de 2SC3672O

- Selecciónⓘ de transistores por parámetros

2SC3672O datasheet

7.1. Size:402K toshiba
2sc3672.pdf pdf_icon

8.1. Size:217K toshiba
2sc3673.pdf pdf_icon

8.2. Size:178K toshiba
2sc3670.pdf pdf_icon

8.3. Size:178K toshiba
2sc3671.pdf pdf_icon

8.4. Size:96K sanyo
2sc3676.pdf pdf_icon

Ordering number EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3676] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=5

8.5. Size:97K sanyo
2sc3675.pdf pdf_icon

Ordering number EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3675] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=2

8.6. Size:178K jmnic
2sc3679.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

8.7. Size:93K jmnic
2sc3678.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3678 ESCRIPTION High Voltage Switching With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON

8.8. Size:25K sanken-ele
2sc3679.pdf pdf_icon

2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3679 Symbol Conditions 2SC3679 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 80

8.9. Size:24K sanken-ele
2sc3678.pdf pdf_icon

2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3678 Symbol Conditions 2SC3678 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max V A 0.1 9.6 2.0 VCEO 800

8.10. Size:218K nell
2sc3679b.pdf pdf_icon

RoHS 2SC3679B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage VCBO Satisfactory linearity of fow

8.11. Size:185K inchange semiconductor
2sc3677.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3677 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE

8.12. Size:199K inchange semiconductor
2sc3679.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3679 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

8.13. Size:199K inchange semiconductor
2sc3678.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3678 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

8.14. Size:183K inchange semiconductor
2sc3676.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3676 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT

8.15. Size:184K inchange semiconductor
2sc3675.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3675 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT

Otros transistores... 2SC3670C, 2SC3670D, 2SC3671, 2SC3671A, 2SC3671B, 2SC3671C, 2SC3671D, 2SC3672, BC556, 2SC3672Y, 2SC3673, 2SC3674, 2SC3675, 2SC3676, 2SC3677, 2SC3678, 2SC3679

2SC3672O Datasheet. Equivalente

2SC3672O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ESPECIFICACIONES MÁXIMAS

CARACTERÍSTICAS ELÉCTRICAS

2SC3672O datasheet

Liste

Recientemente añadidas las descripciónes de los transistores:

Popular searches

AllTransistors(C)