2SC3672O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC3672O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TOSH2

Búsqueda de reemplazo de transistor bipolar 2SC3672O

2SC3672O Datasheet (PDF)

7.1. Size:402K toshiba
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8.1. Size:217K toshiba
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8.2. Size:178K toshiba
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8.4. Size:96K sanyo
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Ordering number EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3676] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=5

8.5. Size:97K sanyo
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Ordering number EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3675] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=2

8.6. Size:178K jmnic
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JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

8.7. Size:93K jmnic
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3678 ESCRIPTION High Voltage Switching With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON

8.8. Size:25K sanken-ele
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2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3679 Symbol Conditions 2SC3679 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 80

8.9. Size:24K sanken-ele
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2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3678 Symbol Conditions 2SC3678 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max V A 0.1 9.6 2.0 VCEO 800

8.10. Size:218K nell
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RoHS 2SC3679B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage VCBO Satisfactory linearity of fow

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3677 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE

8.12. Size:199K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3679 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

8.13. Size:199K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3678 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

8.14. Size:183K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3676 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT

8.15. Size:184K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3675 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT

Otros transistores... 2SC3670C , 2SC3670D , 2SC3671 , 2SC3671A , 2SC3671B , 2SC3671C , 2SC3671D , 2SC3672 , BC556 , 2SC3672Y , 2SC3673 , 2SC3674 , 2SC3675 , 2SC3676 , 2SC3677 , 2SC3678 , 2SC3679 .