2SC3688 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN1940BNPN Triple Diffused Planar Silicon Transistor2SC3688Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3688]Features Fast speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (

JMnic Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute m

isc Silicon NPN Power Transistor 2SC3688DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Ordering number:EN1939BNPN Triple Diffused Planar Silicon Transistor2SC3687Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3687]Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number:EN1937ANPN Triple Diffused Planar Silicon Transistor2SC3685Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3685]Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number:EN1855ANPN Epitaxial Planar Silicon Transistor2SC3689High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SC3689]Features Small Cob (Cob=1.5pF typ). Very small-sized package permitting 2SC3689-usedsets to be made smaller, sl

Ordering number:EN1938ANPN Triple Diffused Planar Silicon Transistor2SC3686Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3686]Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

JMnic Product Specification Silicon NPN Power Transistors 2SC3685 DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3686 ESCRIPTION High breakdown voltage High reliability (adoption of HVP process). Fast speed Adoption of MBIT process. With TO-3PN package APPLICATIONS Ultrahigh-definition color display horizontal deflection output. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting ba

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3680 ESCRIPTION High Voltage Switching Transistor With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PA

2SC3680Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3680 Symbol Conditions 2SC3680 UnitUnit0.24.80.415.6VCBO 900 ICBO VCB=800V 100max A 2.00.1V 9.6VCEO 800

SMD Type TransistorsNPN Transistors2SC3689SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Colle

isc Silicon NPN Power Transistor 2SC3685DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection output applications.ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC3686DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection output applications.ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC3680DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER