2SC3688. Аналоги и основные параметры
Наименование производителя: 2SC3688
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO218
Аналоги (замена) для 2SC3688
- подборⓘ биполярного транзистора по параметрам
2SC3688 даташит
..1. Size:91K sanyo
2sc3688.pdf 

Ordering number EN1940B NPN Triple Diffused Planar Silicon Transistor 2SC3688 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3688] Features Fast speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (
..2. Size:190K jmnic
2sc3688.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute m
..3. Size:198K inchange semiconductor
2sc3688.pdf 

isc Silicon NPN Power Transistor 2SC3688 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
8.1. Size:96K sanyo
2sc3687.pdf 

Ordering number EN1939B NPN Triple Diffused Planar Silicon Transistor 2SC3687 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3687] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (
8.2. Size:93K sanyo
2sc3685.pdf 

Ordering number EN1937A NPN Triple Diffused Planar Silicon Transistor 2SC3685 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3685] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (
8.3. Size:89K sanyo
2sc3689.pdf 

Ordering number EN1855A NPN Epitaxial Planar Silicon Transistor 2SC3689 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SC3689] Features Small Cob (Cob=1.5pF typ). Very small-sized package permitting 2SC3689-used sets to be made smaller, sl
8.4. Size:92K sanyo
2sc3686.pdf 

Ordering number EN1938A NPN Triple Diffused Planar Silicon Transistor 2SC3686 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3686] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (
8.5. Size:211K jmnic
2sc3685.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3685 DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
8.6. Size:99K jmnic
2sc3686.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3686 ESCRIPTION High breakdown voltage High reliability (adoption of HVP process). Fast speed Adoption of MBIT process. With TO-3PN package APPLICATIONS Ultrahigh-definition color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba
8.7. Size:107K jmnic
2sc3680.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3680 ESCRIPTION High Voltage Switching Transistor With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PA
8.8. Size:25K sanken-ele
2sc3680.pdf 

2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3680 Symbol Conditions 2SC3680 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max A 2.0 0.1 V 9.6 VCEO 800
8.9. Size:964K kexin
2sc3689.pdf 

SMD Type Transistors NPN Transistors 2SC3689 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Colle
8.10. Size:198K inchange semiconductor
2sc3685.pdf 

isc Silicon NPN Power Transistor 2SC3685 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM R
8.11. Size:198K inchange semiconductor
2sc3686.pdf 

isc Silicon NPN Power Transistor 2SC3686 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM R
8.12. Size:199K inchange semiconductor
2sc3680.pdf 

isc Silicon NPN Power Transistor 2SC3680 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Другие транзисторы: 2SC3680, 2SC3681, 2SC3682, 2SC3683, 2SC3684, 2SC3685, 2SC3686, 2SC3687, BC547, 2SC3689, 2SC369, 2SC3690, 2SC3691, 2SC3692, 2SC3693, 2SC3694, 2SC3695