2SC3697 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat

Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa

isc Silicon NPN Power Transistor 2SC3694 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 12A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc Silicon NPN Power Transistor 2SC3692 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 6A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc Silicon NPN Power Transistor 2SC3690 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc Silicon NPN Power Transistor 2SC3693 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 8A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY