2SC3697 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3697
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
2SC3697 Transistor Equivalent Substitute - Cross-Reference Search
2SC3697 Datasheet (PDF)
2sc3694.pdf
Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa
2sc3691.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C
2sc3692.pdf
Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat
2sc3693.pdf
Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa
2sc3694.pdf
isc Silicon NPN Power Transistor 2SC3694DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 12ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc3691.pdf
isc Silicon NPN Power Transistor 2SC3691DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sc3692.pdf
isc Silicon NPN Power Transistor 2SC3692DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 6ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sc3690.pdf
isc Silicon NPN Power Transistor 2SC3690DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sc3693.pdf
isc Silicon NPN Power Transistor 2SC3693DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 8ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
