2SC3716 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3716
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 600 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO218
Búsqueda de reemplazo de 2SC3716
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2SC3716 datasheet
8.3. Size:30K jmnic
2sc3710.pdf 
Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle
8.5. Size:177K cn sptech
2sc3710o 2sc3710y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
8.6. Size:210K inchange semiconductor
2sc3719.pdf
isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2
8.7. Size:202K inchange semiconductor
2sc3710.pdf
isc Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.8. Size:197K inchange semiconductor
2sc3710a.pdf
isc Silicon NPN Power Transistor 2SC3710A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1452A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.9. Size:196K inchange semiconductor
2sc3714.pdf
isc Silicon NPN Power Transistor 2SC3714 DESCRIPTION High Switching Speed High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base
Otros transistores... 2SC3710, 2SC3710O, 2SC3710Y, 2SC3711, 2SC3712, 2SC3713, 2SC3714, 2SC3715, TIP35C, 2SC3717, 2SC3718, 2SC3719, 2SC371G, 2SC371GO, 2SC371GR, 2SC371O, 2SC371R
