2SC3716. Аналоги и основные параметры
Наименование производителя: 2SC3716
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO218
Аналоги (замена) для 2SC3716
- подборⓘ биполярного транзистора по параметрам
2SC3716 даташит
8.3. Size:30K jmnic
2sc3710.pdf 
Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle
8.5. Size:177K cn sptech
2sc3710o 2sc3710y.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta
8.6. Size:210K inchange semiconductor
2sc3719.pdf 
isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2
8.7. Size:202K inchange semiconductor
2sc3710.pdf 
isc Silicon NPN Power Transistor 2SC3710 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SA1452 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.8. Size:197K inchange semiconductor
2sc3710a.pdf 
isc Silicon NPN Power Transistor 2SC3710A DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1452A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.9. Size:196K inchange semiconductor
2sc3714.pdf 
isc Silicon NPN Power Transistor 2SC3714 DESCRIPTION High Switching Speed High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base
Другие транзисторы: 2SC3710, 2SC3710O, 2SC3710Y, 2SC3711, 2SC3712, 2SC3713, 2SC3714, 2SC3715, TIP35C, 2SC3717, 2SC3718, 2SC3719, 2SC371G, 2SC371GO, 2SC371GR, 2SC371O, 2SC371R
