2SC3751L
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3751L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 1100
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 35
pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar 2SC3751L
2SC3751L
Datasheet (PDF)
7.1. Size:27K sanyo
2sc3751.pdf 

Ordering number ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3751] Adoption of MBIT process. 4.5 Micaless package facilitating mounting. 10.0 2.8 3.2 2.4 1.6 1
7.2. Size:214K inchange semiconductor
2sc3751.pdf 

isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
8.1. Size:100K sanyo
2sc3750.pdf 

Ordering number EN1969A NPN Triple Diffused Planar Silicon Transistor 2SC3750 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3750] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2
8.2. Size:102K sanyo
2sc3752.pdf 

Ordering number EN1971A NPN Triple Diffused Planar Silicon Transistor 2SC3752 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2041A Wide ASO. [2SC3752] Adoption of MBIT process. Micaless package facilitating mounting. 1 Base 2 Collector 3 Emitter SANYO TO-2
8.3. Size:64K panasonic
2sc3757.pdf 

Transistors 2SC3757 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high speed switching 0.05 0.16+0.10 0.06 3 Features High-speed switching 1 2 Low collector to emitter saturation voltage VCE(sat) (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20
8.4. Size:47K panasonic
2sc3757 e.pdf 

Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Allowing pai
8.5. Size:703K kexin
2sc3757.pdf 

SMD Type Transistors NPN Transistors 2SC3757 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SA1738 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -
8.6. Size:219K inchange semiconductor
2sc3754.pdf 

isc Silicon NPN Power Transistor 2SC3754 DESCRIPTION Wide Area of Safe Operation High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
8.7. Size:211K inchange semiconductor
2sc3750.pdf 

isc Silicon NPN Power Transistor 2SC3750 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V(Min.) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.8. Size:211K inchange semiconductor
2sc3752.pdf 

isc Silicon NPN Power Transistor 2SC3752 DESCRIPTION High Breakdown Voltage and High Reliability High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
8.9. Size:88K inchange semiconductor
2sc3756.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability APPLICATIONS For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=2
8.10. Size:214K inchange semiconductor
2sc3755.pdf 

isc Silicon NPN Power Transistor 2SC3755 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =2
Otros transistores... 2SC374V
, 2SC375
, 2SC3750
, 2SC3750L
, 2SC3750M
, 2SC3750N
, 2SC3751
, 2SC3751K
, TIP122
, 2SC3751M
, 2SC3752
, 2SC3752K
, 2SC3752L
, 2SC3752M
, 2SC3753
, 2SC3754
, 2SC3755
.
History: BDX40-7