2SC3751L
Datasheet and Replacement
Type Designator: 2SC3751L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 1100
V
Maximum Collector-Emitter Voltage |Vce|: 800
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 15
MHz
Collector Capacitance (Cc): 35
pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO220F
- BJT Cross-Reference Search
2SC3751L
Datasheet (PDF)
7.1. Size:27K sanyo
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Ordering number : ENN1970B2SC3751NPN Triple Diffused Planar Silicon Transistor2SC3751800V / 1.5A Switching Regulator ApplicationsFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2041A Wide ASO.[2SC3751] Adoption of MBIT process.4.5 Micaless package facilitating mounting. 10.02.83.22.41.61
7.2. Size:214K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3751DESCRIPTIONHigh Breakdown Voltage and High ReliabilityHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
8.1. Size:100K sanyo
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Ordering number:EN1969ANPN Triple Diffused Planar Silicon Transistor2SC3750500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3750] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2
8.2. Size:102K sanyo
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Ordering number:EN1971ANPN Triple Diffused Planar Silicon Transistor2SC3752800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3752] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2
8.3. Size:64K panasonic
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Transistors2SC3757Silicon NPN epitaxial planer typeUnit: mm0.40+0.10For high speed switching 0.050.16+0.100.063 Features High-speed switching1 2 Low collector to emitter saturation voltage VCE(sat)(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.1automatic insertion through the tape packing and the magazine2.90+0.20
8.4. Size:47K panasonic
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Transistor2SC3757Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Allowing pai
8.5. Size:703K kexin
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SMD Type TransistorsNPN Transistors2SC3757SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA17381.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
8.6. Size:219K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3754DESCRIPTIONWide Area of Safe OperationHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
8.7. Size:211K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.8. Size:211K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3752DESCRIPTIONHigh Breakdown Voltage and High ReliabilityHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
8.9. Size:88K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability APPLICATIONS For TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=2
8.10. Size:214K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC3755DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and line operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =2
Datasheet: 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, MJE340
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
Keywords - 2SC3751L
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