2SC3814 Datasheet. Equivalente

 8.1. Size:34K  nec
 2sc3810.pdf

DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3810 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips i

 8.2. Size:41K  panasonic
 2sc3811.pdf

Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit mm 5.0 0.2 4.0 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emit

 8.3. Size:45K  panasonic
 2sc3811 e.pdf

Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit mm 5.0 0.2 4.0 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emit

 8.4. Size:73K  no
 2sc381.pdf