2SC3849 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3841UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3841 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillators and a UHF mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any c

JMnic Product Specification Silicon NPN Power Transistors 2SC3842 DESCRIPTION With TO-3PML package High voltage ,high speed High current capability APPLICATIONS For use in TV horizontal output and Power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)

SMD Type TransistorsNPN Transistors2SC3841SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3842DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in TV horizontal output and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3841DESCRIPTIONHigh Current-Gain Bandwidth Product:f = 4 GHz TYP.TLow Output Capacitance-C = 1.5 pF TYP.OBLow Base Time Constant:r C = 4.0 ps TYP.bb C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as UHF osc

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3843DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for silicon high speed transistorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI