All Transistors. 2SC3849 Datasheet

 

2SC3849 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3849
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 7000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: R137

 2SC3849 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3849 Datasheet (PDF)

 8.1. Size:96K  nec
2sc3841.pdf

2SC3849 2SC3849

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3841UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3841 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillators and a UHF mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any c

 8.2. Size:183K  nec
2sc3840.pdf

2SC3849 2SC3849

 8.3. Size:327K  fuji
2sc3847.pdf

2SC3849 2SC3849

 8.4. Size:146K  jmnic
2sc3842.pdf

2SC3849 2SC3849

JMnic Product Specification Silicon NPN Power Transistors 2SC3842 DESCRIPTION With TO-3PML package High voltage ,high speed High current capability APPLICATIONS For use in TV horizontal output and Power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)

 8.5. Size:1210K  kexin
2sc3841.pdf

2SC3849 2SC3849

SMD Type TransistorsNPN Transistors2SC3841SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

 8.6. Size:177K  inchange semiconductor
2sc3842.pdf

2SC3849 2SC3849

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3842DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in TV horizontal output and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.7. Size:185K  inchange semiconductor
2sc3841.pdf

2SC3849 2SC3849

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3841DESCRIPTIONHigh Current-Gain Bandwidth Product:f = 4 GHz TYP.TLow Output Capacitance-C = 1.5 pF TYP.OBLow Base Time Constant:r C = 4.0 ps TYP.bb C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as UHF osc

 8.8. Size:178K  inchange semiconductor
2sc3843.pdf

2SC3849 2SC3849

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3843DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for silicon high speed transistorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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