2G20 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2G20 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 10 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.13 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.7 MHz
Capacitancia de salida (Cc): 47 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO1
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2G20 datasheet
dm2g200sh6a.pdf
D WTM D WTM DM2G200SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto
dm2g200sh12ae.pdf
Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G200SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul
dm2g200sh6n.pdf
D WTM D WTM DM2G200SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive
dm2g200sh12a.pdf
Preliminary D WTM D WTM Mar. 2008 DM2G200SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste
Otros transistores... 2G106, 2G108, 2G109, 2G110, 2G138, 2G139, 2G140, 2G141, TIP127, 2G201, 2G202, 2G210, 2G220, 2G221, 2G222, 2G223, 2G224
Parámetros del transistor bipolar y su interrelación.
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