2SC387AG Todos los transistores

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2SC387AG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC387AG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 650 MHz

Capacitancia de salida (Cc): 1.5 pF

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO98-1

Búsqueda de reemplazo de transistor bipolar 2SC387AG

 

2SC387AG Datasheet (PDF)

4.1. 2sc3872.pdf Size:66K _panasonic

2SC387AG
2SC387AG

Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings

4.2. 2sc3870.pdf Size:59K _panasonic

2SC387AG
2SC387AG

Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching ? 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximu

4.3. 2sc3874.pdf Size:62K _panasonic

2SC387AG
2SC387AG

Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ? 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25?C) 2.7 0.3 3.

4.4. 2sc3870.pdf Size:152K _jmnic

2SC387AG
2SC387AG

JMnic Product Specification Silicon NPN Power Transistors 2SC3870 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emit

4.5. 2sc3873.pdf Size:84K _jmnic

2SC387AG
2SC387AG

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION · ·With TO-3PFa package ·High VCBO ·High speed switching ·Good linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALU

4.6. 2sc3874.pdf Size:175K _jmnic

2SC387AG
2SC387AG

JMnic Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION ·With TO-3PL package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings

4.7. 2sc3870.pdf Size:122K _inchange_semiconductor

2SC387AG
2SC387AG

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3870 Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-b

4.8. 2sc3873.pdf Size:123K _inchange_semiconductor

2SC387AG
2SC387AG

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3873 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High VCBO Ў¤ High speed switching Ў¤ Good linearity of hFE Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL

4.9. 2sc3874.pdf Size:140K _inchange_semiconductor

2SC387AG
2SC387AG

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION Ў¤ With TO-3PL package Ў¤ High speed switching Ў¤ High VCBO Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute

4.10. 2sc3871.pdf Size:262K _inchange_semiconductor

2SC387AG
2SC387AG

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3871 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT

Otros transistores... 2SC3873 , 2SC3874 , 2SC3875 , 2SC3876 , 2SC3877 , 2SC3878 , 2SC3879 , 2SC387A , 2N2907 , 2SC387G , 2SC388 , 2SC3880 , 2SC3881 , 2SC3883 , 2SC3884 , 2SC3884A , 2SC3885 .

 


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Introduzca al menos 1 números o letras