Биполярный транзистор 2SC387AG - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC387AG
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 650 MHz
Ёмкость коллекторного перехода (Cc): 1.5 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO92
2SC387AG Datasheet (PDF)
2sc3873.pdf
Power Transistors2SC3873Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea
2sc3880s 2sc3195 2sc3194 ktc9016 ktc9018 bf599 2sc3879s 2sc3193 2sc3192 ktc9011 2sc3878s 2sc3191 2sc3190.pdf
2sc3870.pdf
Power Transistors2SC3870Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Abso
2sc3872.pdf
Power Transistors2SC3872Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximu
2sc3874.pdf
Power Transistors2SC3874Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7
2sc3873.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION With TO-3PFa package High VCBO High speed switching Good linearity of hFE Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
2sc3870.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3870 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open
2sc3874.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION With TO-3PL package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 EmitterAbsolute maximum ratin
2sc3873.pdf
isc Silicon NPN Power Transistor 2SC3873DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25
2sc3870.pdf
isc Silicon NPN Power Transistor 2SC3870DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25
2sc3871.pdf
isc Silicon NPN Power Transistor 2SC3871DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25
2sc3874.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC3874DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Switching SpeedWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage high-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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