2SC3916
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3916
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250(typ)
MHz
Capacitancia de salida (Cc): 3.7
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SPA
Búsqueda de reemplazo de transistor bipolar 2SC3916
2SC3916
Datasheet (PDF)
..1. Size:30K sanyo
2sa1522 2sc3916.pdf 
Ordering number:ENN2162BPNP/NPN Epitaxial Planar Silicon Transistors2SA1522/2SC3916Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1522/2SC3916]2.24.0Features On-chip bias resistance : R1=10k , R2=10k . Small-sized package : SPA.0.4
8.1. Size:30K sanyo
2sa1523 2sc3917.pdf
Ordering number:ENN2163BPNP/NPN Epitaxial Planar Silicon Transistors2SA1523/2SC3917Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1523/2SC3917]2.2Features 4.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Small-sized package : SPA.0.4
8.2. Size:30K sanyo
2sa1518 2sc3912.pdf
Ordering number:ENN2159BPNP/NPN Epitaxial Planar Silicon Transistors2SA1518/2SC3912Switching Applications (With Bias Resistance)Application Package Dimensions Switching circuits, inverters circuits, inferfaceunit:mmcircuits, driver circuits.2018B[2SA1518/2SC3912]Features0.4 On-chip bias resistance : R1=10k , R2=10k . 0.163 Small-sized package : CP.0
8.3. Size:30K sanyo
2sa1519 2sc3913.pdf
Ordering number:ENN2160BPNP/NPN Epitaxial Planar Silicon Transistors2SA1519/2SC3913Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1519/2SC3913]Features0.4 On-chip bias resistance : R1=4.7k , R2=4.7k . 0.163 Small-sized package : CP.
8.4. Size:30K sanyo
2sa1521 2sc3915.pdf
Ordering number:ENN2166APNP/NPN Epitaxial Planar Silicon Transistors2SA1521/2SC3915Switching Applications (with Bias Resistance)Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2018B[2SA1521/2SC3915]Features0.4 On-chip bias resistance : R1=2.2k , R2=2.2k . 0.163 Small-sized package : CP.
8.5. Size:30K sanyo
2sa1525 2sc3919.pdf
Ordering number:ENN2149BPNP/NPN Epitaxial Planar Silicon Transistors2SA1525/2SC3919Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1525/2SC3919]2.24.0Features On-chip bias resistance : R1=2.2k , R2=2.2k . Small-sized package : SPA.0.
8.6. Size:30K sanyo
2sa1520 2sc3914.pdf
Ordering number:ENN2161BPNP/NPN Epitaxial Planar Silicon Transistors2SA1520/2SC3914Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1520/2SC3914]Features0.4 On-chip bias resistance : R1=2.2k , R2=10k . 0.163 Small-sized package : CP.0
8.7. Size:32K sanyo
2sa1524 2sc3918.pdf
Ordering number:ENN2164BPNP/NPN Epitaxial Planar Silicon Transistors2SA1524/2SC3918Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1524/2SC3918]2.24.0Features On-chip bias resistance : R1=2.2k , R2=10k . Small-sized package : SPA.0.4
8.9. Size:712K kexin
2sc3915.pdf
SMD Type TransistorsNPN Transistors2SC3915SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SA1521 +0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
8.10. Size:704K kexin
2sc3914.pdf
SMD Type TransistorsNPN Transistors2SC3914SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SA15201.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
8.11. Size:705K kexin
2sc3912.pdf
SMD Type TransistorsNPN Transistors2SC3912SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SA15181.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
8.12. Size:702K kexin
2sc3913.pdf
SMD Type TransistorsNPN Transistors2SC3913SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1519+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
8.13. Size:213K inchange semiconductor
2sc3910.pdf
isc Silicon NPN Power Transistor 2SC3910DESCRIPTIONHigh Speed SwitchingHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
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