Биполярный транзистор 2SC3916 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3916
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250(typ) MHz
Ёмкость коллекторного перехода (Cc): 3.7 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SPA
2SC3916 Datasheet (PDF)
2sa1522 2sc3916.pdf
Ordering number:ENN2162BPNP/NPN Epitaxial Planar Silicon Transistors2SA1522/2SC3916Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1522/2SC3916]2.24.0Features On-chip bias resistance : R1=10k , R2=10k . Small-sized package : SPA.0.4
2sa1523 2sc3917.pdf
Ordering number:ENN2163BPNP/NPN Epitaxial Planar Silicon Transistors2SA1523/2SC3917Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1523/2SC3917]2.2Features 4.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Small-sized package : SPA.0.4
2sa1518 2sc3912.pdf
Ordering number:ENN2159BPNP/NPN Epitaxial Planar Silicon Transistors2SA1518/2SC3912Switching Applications (With Bias Resistance)Application Package Dimensions Switching circuits, inverters circuits, inferfaceunit:mmcircuits, driver circuits.2018B[2SA1518/2SC3912]Features0.4 On-chip bias resistance : R1=10k , R2=10k . 0.163 Small-sized package : CP.0
2sa1519 2sc3913.pdf
Ordering number:ENN2160BPNP/NPN Epitaxial Planar Silicon Transistors2SA1519/2SC3913Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1519/2SC3913]Features0.4 On-chip bias resistance : R1=4.7k , R2=4.7k . 0.163 Small-sized package : CP.
2sa1521 2sc3915.pdf
Ordering number:ENN2166APNP/NPN Epitaxial Planar Silicon Transistors2SA1521/2SC3915Switching Applications (with Bias Resistance)Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2018B[2SA1521/2SC3915]Features0.4 On-chip bias resistance : R1=2.2k , R2=2.2k . 0.163 Small-sized package : CP.
2sa1525 2sc3919.pdf
Ordering number:ENN2149BPNP/NPN Epitaxial Planar Silicon Transistors2SA1525/2SC3919Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1525/2SC3919]2.24.0Features On-chip bias resistance : R1=2.2k , R2=2.2k . Small-sized package : SPA.0.
2sa1520 2sc3914.pdf
Ordering number:ENN2161BPNP/NPN Epitaxial Planar Silicon Transistors2SA1520/2SC3914Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1520/2SC3914]Features0.4 On-chip bias resistance : R1=2.2k , R2=10k . 0.163 Small-sized package : CP.0
2sa1524 2sc3918.pdf
Ordering number:ENN2164BPNP/NPN Epitaxial Planar Silicon Transistors2SA1524/2SC3918Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1524/2SC3918]2.24.0Features On-chip bias resistance : R1=2.2k , R2=10k . Small-sized package : SPA.0.4
2sc3915.pdf
SMD Type TransistorsNPN Transistors2SC3915SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SA1521 +0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
2sc3914.pdf
SMD Type TransistorsNPN Transistors2SC3914SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SA15201.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc3912.pdf
SMD Type TransistorsNPN Transistors2SC3912SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SA15181.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc3913.pdf
SMD Type TransistorsNPN Transistors2SC3913SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1519+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc3910.pdf
isc Silicon NPN Power Transistor 2SC3910DESCRIPTIONHigh Speed SwitchingHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
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