2SC3944A Datasheet. Equivalente

 ..1. Size:210K  inchange semiconductor
 2sc3944a.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3944A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1535A Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency driver and high power amplification. AB

 ..2. Size:80K  inchange semiconductor
 2sc3944 2sc3944a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION With TO-220Fa package Complement to type 2SA1535/1535A High transition frequency APPLICATIONS For low-frequency driver and high power amplification Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector

 7.1. Size:42K  panasonic
 2sc3944.pdf

Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Unit mm Features 10.0 0.2 4.2 0.2 Satisfactory foward current transfer ratio hFE vs. collector cur- 5.5 0.2 2.7 0.2 rent IC characteristics High transition frequency fT Makes up a complementary pair with 2SA1535 an

 7.2. Size:215K  inchange semiconductor
 2sc3944.pdf

isc Silicon NPN Power Transistor 2SC3944 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1535 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency driver and high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.1. Size:47K  panasonic
 2sc3940.pdf

Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1534 and 2SA1534A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector

 8.2. Size:51K  panasonic
 2sc3940 e.pdf

Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1534 and 2SA1534A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector

 8.3. Size:42K  panasonic
 2sc3946.pdf

Power Transistors 2SC3946 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C

 8.4. Size:43K  panasonic
 2sc3943.pdf

Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Small transition frequency fT 3.1 0.1 Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C) 0.5 0.1 0.8 0.1 Pa

 8.5. Size:42K  panasonic
 2sc3942.pdf

Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C) 0.5 0.1

 8.6. Size:50K  panasonic
 2sc3941 e.pdf

Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm For small TV video output 5.0 0.2 4.0 0.2 Complementary to 2SB1221 Features High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 Parameter Symbol

 8.7. Size:357K  fuji
 2sc3947.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.8. Size:147K  jmnic
 2sc3949.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UN

 8.9. Size:149K  jmnic
 2sc3947.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3947 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNI

 8.10. Size:211K  foshan
 2sc3942 3da3942.pdf

2SC3942(3DA3942) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output applications. Features High V , small collector output capacitance. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V

 8.11. Size:117K  inchange semiconductor
 2sc3949.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER

 8.12. Size:210K  inchange semiconductor
 2sc3942.pdf

isc Silicon NPN Power Transistor 2SC3942 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 8.13. Size:215K  inchange semiconductor
 2sc3947.pdf

isc Silicon NPN Power Transistor 2SC3947 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850