Биполярный транзистор 2SC3944A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3944A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: X106
2SC3944A Datasheet (PDF)
2sc3944a.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3944ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1535AGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency driver and high power amplification.AB
2sc3944 2sc3944a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION With TO-220Fa package Complement to type 2SA1535/1535A High transition frequency APPLICATIONS For low-frequency driver and high power amplification Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION1 Base 2 Collector
2sc3944.pdf
Power Transistors2SC3944, 2SC3944ASilicon NPN epitaxial planar typeFor low-frequency driver and high power amplificationComplementary to 2SA1535 and 2SA1535AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory foward current transfer ratio hFE vs. collector cur-5.5 0.2 2.7 0.2rent IC characteristicsHigh transition frequency fTMakes up a complementary pair with 2SA1535 an
2sc3944.pdf
isc Silicon NPN Power Transistor 2SC3944DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1535Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency driver and high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc3940.pdf
Transistor2SC3940, 2SC3940ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1534 and 2SA1534A5.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector
2sc3940 e.pdf
Transistor2SC3940, 2SC3940ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1534 and 2SA1534A5.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector
2sc3946.pdf
Power Transistors2SC3946Silicon NPN triple diffusion planar typeFor color TV horizontal deflection driverUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh collector to emitter VCEO 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C
2sc3943.pdf
Power Transistors2SC3943Silicon NPN epitaxial planar typeFor video amplifierUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesSmall transition frequency fT 3.1 0.1Small collector output capacitance CobFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C)0.5 0.10.8 0.1Pa
2sc3942.pdf
Power Transistors2SC3942Silicon NPN triple diffusion planar typeFor color TV chroma outputUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh collector to emitter VCEO 3.1 0.1Small collector output capacitance CobFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C)0.5 0.1
2sc3941 e.pdf
Transistor2SC3941Silicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mmFor small TV video output5.0 0.2 4.0 0.2Complementary to 2SB1221FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)+0.15 +0.15Parameter Symbol
2sc3947.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3949.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UN
2sc3947.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC3947 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNI
2sc3942 3da3942.pdf
2SC3942(3DA3942) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. : Features: High V , small collector output capacitance. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V
2sc3949.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER
2sc3942.pdf
isc Silicon NPN Power Transistor 2SC3942DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sc3947.pdf
isc Silicon NPN Power Transistor 2SC3947DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050