2SC4026 Datasheet. Equivalente

 ..1. Size:59K  panasonic
 2sc4026.pdf

Power Transistors 2SC4026 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th

 ..2. Size:178K  jmnic
 2sc4026.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4026 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) APPLICATIONS For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolu

 ..3. Size:211K  inchange semiconductor
 2sc4026.pdf

isc Silicon NPN Power Transistor 2SC4026 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:349K  sanyo
 2sa1552 2sc4027.pdf

Ordering number EN2262D 2SA1552 / 2SC4027 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1552 / 2SC4027 Applications Applications Converters, inverters, color TV audio output. Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p

 8.2. Size:58K  sanyo
 2sc4027.pdf

Ordering number ENN2262B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1552/2SC4027 High-Voltage Switching Applications Applications Package Dimensions Converters, inverters, color TV audio output. unit mm 2045B Features [2SA1552/2SC4027] 6.5 Adoption of FBET, MBIT processes. 2.3 5.0 0.5 4 High voltage and large current capacity. Fast switching time. Small

 8.3. Size:302K  onsemi
 2sa1552 2sc4027.pdf

Ordering number EN2262F 2SA1552/2SC4027 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat PNP NPN Single TP/TP-FA Applications Converters, inverters, color TV audio output Features Adoption of FBET, MBIT processes High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 2SA1552 / 2SC402

 8.4. Size:146K  utc
 2sc4027.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC4027 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS 1 FEATURES TO-220 * High voltage and large current capacity. * Fast switching time. 1 TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T TO-220 B C E Tube 2SC4027L-x-TN3-R 2SC4027G-

 8.5. Size:135K  mospec
 2sc4029.pdf

A A A

 8.6. Size:193K  jmnic
 2sc4029.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

 8.7. Size:23K  sanken-ele
 2sc4020.pdf

2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC4020 Symbol Conditions 2SC4020 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IEB

 8.8. Size:23K  sanken-ele
 2sc4024.pdf

High hFE LOW VCE (sat) 2SC4024 Silicon NPN Epitaxial Planar Transistor Application DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Conditions 2SC4024 Symbol 2SC4024 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=100V 10max VCBO 100 V A IEBO VE

 8.9. Size:209K  inchange semiconductor
 2sc4020.pdf

isc Silicon NPN Power Transistor 2SC4020 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 0.7A CE(sat) C Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed switching regulator and general purpose applications. ABSOLUTE

 8.10. Size:216K  inchange semiconductor
 2sc4029.pdf

isc Silicon NPN Power Transistor 2SC4029 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 120W high fidelity audio frequency ampl

 8.11. Size:181K  inchange semiconductor
 2sc4024.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4024 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.12. Size:230K  inchange semiconductor
 2sc4027.pdf

isc Silicon NPN Power Transistor 2SC4027 DESCRIPTION High voltage and large current capacity Ultrahigh-speed switching Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA1552 APPLICATIONS Converters , inverters and color TV audio output ABSOLUTE MAXIMUM RATINGS(T