All Transistors. 2SC4026 Datasheet

 

2SC4026 Datasheet and Replacement


   Type Designator: 2SC4026
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO218
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2SC4026 Datasheet (PDF)

 ..1. Size:59K  panasonic
2sc4026.pdf pdf_icon

2SC4026

Power Transistors2SC4026Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

 ..2. Size:178K  jmnic
2sc4026.pdf pdf_icon

2SC4026

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4026 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) APPLICATIONS For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolu

 ..3. Size:211K  inchange semiconductor
2sc4026.pdf pdf_icon

2SC4026

isc Silicon NPN Power Transistor 2SC4026DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.1. Size:349K  sanyo
2sa1552 2sc4027.pdf pdf_icon

2SC4026

Ordering number : EN2262D2SA1552 / 2SC4027SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1552 / 2SC4027ApplicationsApplications Converters, inverters, color TV audio output.Features Adoption of FBET, MBIT processes. High voltage and large current capacity. Ultrahigh-speed switching. Small and slim p

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2134 | BSV65RA | 2SC2678 | NSS1C301E | KST4401 | GES2484 | KSC3265O

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