2SC4147
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4147
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 300
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SC4147
2SC4147
Datasheet (PDF)
8.1. Size:148K jmnic
2sc4149.pdf 
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V
8.2. Size:190K jmnic
2sc4140.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4140 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
8.3. Size:107K jmnic
2sc4148.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4148 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V VCEO Collector-e
8.4. Size:25K sanken-ele
2sc4140.pdf
2SC4140Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4140 Symbol Conditions 2SC4140 UnitUnit0.24.80.415.60.19.6 2.0VCBO 500 ICBO VCB=500V 100max
8.5. Size:116K inchange semiconductor
2sc4149.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
8.6. Size:218K inchange semiconductor
2sc4140.pdf
isc Silicon NPN Power Transistor 2SC4140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
8.7. Size:186K inchange semiconductor
2sc4148.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector Current-I = 7A(Max.)CLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 3.5ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
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, 2SA1793
, 2SA1794
, 2SA1795
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, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
