All Transistors. 2SC4147 Datasheet

 

2SC4147 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4147
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO126

 2SC4147 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4147 Datasheet (PDF)

 8.1. Size:148K  jmnic
2sc4149.pdf

2SC4147
2SC4147

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V

 8.2. Size:190K  jmnic
2sc4140.pdf

2SC4147
2SC4147

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4140 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 8.3. Size:107K  jmnic
2sc4148.pdf

2SC4147
2SC4147

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4148 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V VCEO Collector-e

 8.4. Size:25K  sanken-ele
2sc4140.pdf

2SC4147

2SC4140Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4140 Symbol Conditions 2SC4140 UnitUnit0.24.80.415.60.19.6 2.0VCBO 500 ICBO VCB=500V 100max

 8.5. Size:116K  inchange semiconductor
2sc4149.pdf

2SC4147
2SC4147

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

 8.6. Size:218K  inchange semiconductor
2sc4140.pdf

2SC4147
2SC4147

isc Silicon NPN Power Transistor 2SC4140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.7. Size:186K  inchange semiconductor
2sc4148.pdf

2SC4147
2SC4147

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector Current-I = 7A(Max.)CLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 3.5ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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