2SC4188F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4188F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 200
V
Tensión colector-emisor (Vce): 200
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 18
MHz
Capacitancia de salida (Cc): 260
pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SC4188F
2SC4188F
Datasheet (PDF)
7.1. Size:91K sanyo
2sc4188.pdf 

Ordering number EN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2010C frequency characteristic Cre=1.3pF typ. [2SC4188] Adoption of FBET process. JEDEC TO220AB 1 Base EI
8.2. Size:44K nec
2sc4183.pdf 

DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4183 is specifically designed for UHF RF amplifier applica- PACKAGE DIMENSIONS tions. The 2SC4183 features high gain, low noise, and excellent forward in millimeters AGC characteristics in tiny plastic super mini mold package makes it 2.1 0.1 1.25
8.4. Size:58K nec
2sc3545 2sc4184 ne94430 ne94433.pdf 

NPN SILICON NE944 OSCILLATOR AND MIXER TRANSISTOR SERIES DESCRIPTION FEATURES The NE944 series of NPN silicon epitaxial bipolar transistors LOW COST is intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT mixer applications. It is suitable for automotive keyless entry fT = 2000 MHz TYP and TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN
8.5. Size:47K nec
2sc4186.pdf 

DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a TV receiver. The device 2.1 0.1 features stable oscillation and small frequency drift against any change 1.2
8.7. Size:47K nec
2sc4182.pdf 

DATA SHEET SILICON TRANSISTOR 2SC4182 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4182 is designed for use as an oscillator or a mixer in a VHF in millimeters TV tuners. Super mini mold package makes it suitable for use in small 2.1 0.1 type equipments especially recommended for Hibrid Integrated Circuit
8.8. Size:38K nec
2sc4184.pdf 

DATA SHEET SILICON TRANSISTOR 2SC4184 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4184 is designed for use as an oscillator or a mixer in a UHF PACKAGE DIMENSIONS TV tuners. Super mini mold package makes it suitable for use in small in millimeters type equipments especially recommended for Hibrid Integrated Circuits 2.1 0.1 and
8.9. Size:43K nec
2sc4187.pdf 

DATA SHEET SILICON TRANSISTOR 2SC4187 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4187 is designed primarily for use in low voltage and low PACKAGE DIMENSIONS current application up to UHF band. The 2SC4187 is ideal for pagers, in millimeters electro-optic detector postamplifier applications, and other battery pow- 2.1 0.1 er
8.10. Size:44K nec
2sc4185.pdf 

DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4185 is an NPN silicon epitaxial transistor intended for use PACKAGE DIMENSIONS as a UHF oscillator and a mixer in a tuner of a TV receiver. The device in millimeters features stable oscillation and small frequency drift against any change 2.1 0.1
8.11. Size:450K htsemi
2sc4180.pdf 

2 SC4180 TRANSISTOR (NPN) FEATURES SOT 323 High DC Current Gain APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 120 V 2. EMITTER VCEO Collector-Emitter Voltage 120 V 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collect
8.12. Size:355K kexin
2sc4180.pdf 

SMD Type Transistors NPN Transistors 2SC4180 Features High DC Current Gain Complementary to 2SA1612 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 mA Collector Power Dissip
Otros transistores... 2SC4183
, 2SC4185
, 2SC4186
, 2SC4187
, 2SC4188
, 2SC4188C
, 2SC4188D
, 2SC4188E
, TIP122
, 2SC4189
, 2SC4190
, 2SC4191
, 2SC4192
, 2SC4193
, 2SC4194
, 2SC4195
, 2SC4196
.
History: NB111HH
| BCX54T
| 2SC4188
| 2SC4210
| 2SC2957
| MRF553
| MS1226