2SC4208 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC4208, 2SC4208ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1619 and 2SA1619A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with2SA1619 and 2SA1619A.Allowing supply with the radial taping.0.7 0.1

Transistor2SC4208, 2SC4208ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1619 and 2SA1619A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with2SA1619 and 2SA1619A.Allowing supply with the radial taping.0.7 0.1

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut

2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit: mm High Speed Switching Applications High transition frequency: fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance: C

2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 30

Ordering number:EN2531ANPN Epitaxial Planar Silicon Transistor2SC4204High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2003BFeatures [2SC4204]5.0 Adoption of MBIT process.4.04.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage0.

SMD Type TransistorsNPN Transistors2SC4209SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=80V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA16201.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.