2SC4208 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1619 and 2SA1619A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7 0.1

Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1619 and 2SA1619A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7 0.1

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current VCEO = 50 V, IC = 150 mA (max) High hFE hFE = 120 700 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut

2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit mm High Speed Switching Applications High transition frequency fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance C

2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 30

Ordering number EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers. unit mm 2003B Features [2SC4204] 5.0 Adoption of MBIT process. 4.0 4.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage 0.

SMD Type Transistors NPN Transistors 2SC4209 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=80V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SA1620 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4205 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications.