2SC4210 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4210  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO236

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SC4210

- Selecciónⓘ de transistores por parámetros

 

2SC4210 datasheet

 ..1. Size:195K  toshiba
2sc4210.pdf pdf_icon

2SC4210

2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit mm High DC current gain hFE = 100 320 Complementary to 2SA1621 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector curre

 ..2. Size:889K  kexin
2sc4210.pdf pdf_icon

2SC4210

SMD Type Transistors NPN Transistors 2SC4210 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SA1621 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

 8.1. Size:290K  toshiba
2sc4215.pdf pdf_icon

2SC4210

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

 8.2. Size:274K  toshiba
2sc4213-a 2sc4213-b.pdf pdf_icon

2SC4210

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse hFE Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance RON = 1 (typ.) (IB = 5 mA) High DC current gain hFE = 200 to 1200 Small package Absolute Maximum

Otros transistores... 2SC4202, 2SC4203, 2SC4204, 2SC4205, 2SC4206, 2SC4207, 2SC4208, 2SC4209, A940, 2SC4211, 2SC4212, 2SC4213, 2SC4214, 2SC4215, 2SC4216, 2SC4217, 2SC4218