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2SC4214 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4214
   Código: HN
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 850 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SP1

 Búsqueda de reemplazo de transistor bipolar 2SC4214

 

2SC4214 Datasheet (PDF)

 ..1. Size:279K  toshiba
2sc4214.pdf pdf_icon

2SC4214

2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit mm Low noise figure NF = 2.8dB (typ.) High power gain V = 4.5 V G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage V

 8.1. Size:290K  toshiba
2sc4215.pdf pdf_icon

2SC4214

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

 8.2. Size:274K  toshiba
2sc4213-a 2sc4213-b.pdf pdf_icon

2SC4214

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse hFE Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance RON = 1 (typ.) (IB = 5 mA) High DC current gain hFE = 200 to 1200 Small package Absolute Maximum

 8.3. Size:289K  toshiba
2sc4213.pdf pdf_icon

2SC4214

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra

Otros transistores... 2SC4206 , 2SC4207 , 2SC4208 , 2SC4209 , 2SC4210 , 2SC4211 , 2SC4212 , 2SC4213 , TIP35C , 2SC4215 , 2SC4216 , 2SC4217 , 2SC4218 , 2SC4219 , 2SC4220 , 2SC4221 , 2SC4222 .

History: NB213FY | 2SC3014

 

 
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